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| inchange semiconductor product specification silicon npn power transistors 2SC3979 description ? ? with to-220fa package ? high breakdown voltage ? high speed switching ? wide area of safe operation applications ? for high breakdown voltage high-speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings at ta=25 ?? symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 3 a i cm collector current-peak 5 a i b base current 1 a t c =25 ?? 40 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol ?? inchange semiconductor
inchange semiconductor product specification 2 silicon npn power transistors 2SC3979 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma , i b =0 800 v v cesat collector-emitter saturation voltage i c =0.8a ;i b =0.16a 1.5 v v besat base-emitter saturation voltage i c =0.8a; i b =0.16a 1.5 v i cbo collector cut-off current v cb =900v; i e =0 50 | a i ebo emitter cut-off current v eb =7v; i c =0 50 | a h fe-1 dc current gain i c =0.1a ; v ce =5v 8 h fe-2 dc current gain i c =0.8a ; v ce =5v 6 f t transition frequency i c =0.15a ; v ce =5v 10 mhz switching times t on turn-on time 0.7 | s t s storage time 2.5 | s t f fall time i c =0.8a ;i b1 =0.16a i b2 =-0.32a v cc =250v 0.3 | s ?? inchange semiconductor inchange semiconductor product specification 3 silicon npn power transistors 2SC3979 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) ?? inchange semiconductor inchange semiconductor product specification 4 silicon npn power transistors 2SC3979 ?? inchange semiconductor |
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